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PD - 9.1697
PRELIMINARY
l l l l
IRL3402
HEXFET(R) Power MOSFET
D
Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching
G
VDSS = 20V RDS(on) = 0.01
S
Description
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
ID = 85A
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 5.0V Continuous Drain Current, V GS @ 5.0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100s) Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
85 54 340 110 0.91 10 14 290 51 11 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
1.1 --- 62
Units
C/W
10/31/97
IRL3402
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. 20 --- --- --- 0.70 65 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.010 VGS = 4.5V, ID = 51A 0.008 VGS = 7.0V, ID = 51A --- V VDS = VGS, ID = 250A --- S VDS = 10V, I D = 51A 25 VDS = 20V, VGS = 0V A 250 VDS = 16V, VGS = 0V, T J = 150C 100 VGS = 10V nA -100 VGS = -10V 78 ID = 51A 18 nC VDS = 10V 30 VGS = 4.5V, See Fig. 6 --- VDD = 10V --- ID = 51A ns --- RG = 5.0, VGS = 4.5V --- RD = 0.19, Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 3300 --- VGS = 0V 1400 --- pF VDS = 15V 510 --- = 1.0MHz, See Fig. 5
Typ. --- 0.02 --- --- --- --- --- --- --- --- --- --- --- 10 140 80 120
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Q rr t on
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 85 showing the A G integral reverse --- --- 340 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 51A, VGS = 0V --- 72 110 ns TJ = 25C, IF = 51A --- 160 240 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. Starting TJ = 25C, L = 220H RG = 25, IAS = 51A.
Pulse width 300s; duty cycle 2%. Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4
ISD 51A, di/dt 82A/s, VDD V(BR)DSS,
TJ 150C
IRL3402
1000
VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP
1000
I D , Drain-to-Source Current (A)
100
I D, Drain-to-Source Current (A)
VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP
100
2.25V 20s PULSE WIDTH TJ = 25 C
1 10 100
2.25V 20s PULSE WIDTH TJ = 150 C
1 10 100
10 0.1
10 0.1
V DS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
I D = 85A
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 C
1.5
100
TJ = 150 C
1.0
0.5
10 2 3 4
1 V DS = 50V 20s PULSE WIDTH 5 6
0.0 -60 -40 -20
VGS = 4.5V 10V
0 20 40 60 80 100 120 140 160
V GS, Gate-to-Source Voltage (V)
T J, Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRL3402
6000
5000
4000
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
15
ID = 85 A VDS = 16V
C, Capacitance (pF)
10
Ciss
3000
2000
Coss
5
1000
Crss
0 1 10 100
0 0 20 40 60
FOR TEST CIRCUIT SEE FIGURE 13
80 100 120
VDS , Drain-to-Source Voltage (V)
Q G, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000
ISD , Reverse Drain Current (A)
TJ = 150 C TJ = 25 C I D , Drain Current (A)
100 1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
10us
10
100
100us 1ms
1
10
10ms
0.1 0.2
VGS = 0 V
0.6 1.0 1.4 1.8 2.2
1 1
TC = 25 C TJ = 150 C Single Pulse
10 100
V SD,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRL3402
100 600
EAS , Single Pulse Avalanche Energy (mJ)
LIMITED BY PACKAGE
80
TOP
500
BOTTOM
ID 23A 32A 51A
I D , Drain Current (A)
400
60
300
40
200
20
100
0 25 50 75 100 125 150
0 25 50 75 100 125 150
TC , Case Temperature
( C)
Starting T J, Junction Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Maximum Avalanche Energy Vs. Drain Current
10
(Z thJC ) Thermal Response
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL3402
R DS (on), Drain-to-Source On Resistance ( )
0.020 0.012
( R DS (on), Drain-to-Source On Resistance )
0.011
0.015
VGS = 4.5V
0.010
0.009
ID = 85A
0.010
0.008
VGS = 7.0V
0.007
0.005 0 50 100 150 200 250 300 350
0.006 2 3 4 5 6 7 8
I D , Drain Current (A)
VGS , Gate-to-Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
IRL3402
Package Outline
TO-220AB Outline Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 ) 2 . 6 2 ( .1 0 3 ) 1 0 . 5 4 (. 4 1 5 ) 1 0 . 2 9 (. 4 0 5 ) 3 . 7 8 (. 1 4 9 ) 3 . 5 4 (. 1 3 9 ) -A6 . 4 7 (. 2 5 5 ) 6 . 1 0 (. 2 4 0 ) -B4 . 6 9 ( .1 8 5 ) 4 . 2 0 ( .1 6 5 ) 1 .3 2 (. 0 5 2 ) 1 .2 2 (. 0 4 8 )
4 1 5 . 2 4 ( .6 0 0 ) 1 4 . 8 4 ( .5 8 4 )
1 . 1 5 ( .0 4 5 ) M IN 1 2 3
L E A D A S S IG N M E N T S 1 - G A TE 2 - D R AIN 3 - SO URCE 4 - D R AIN
1 4 . 0 9 (.5 5 5 ) 1 3 . 4 7 (.5 3 0 )
4 . 0 6 (. 1 6 0 ) 3 . 5 5 (. 1 4 0 )
3X
1 .4 0 (. 0 5 5 ) 1 .1 5 (. 0 4 5 )
0 . 9 3 ( .0 3 7 ) 3 X 0 . 6 9 ( .0 2 7 ) 0 .3 6 (. 0 1 4 ) M BA M
3X
0 . 5 5 (. 0 2 2 ) 0 . 4 6 (. 0 1 8 )
2 . 5 4 ( .1 0 0 ) 2X NO TE S : 1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L I N G D IM E N S IO N : I N C H
2 .9 2 (. 1 1 5 ) 2 .6 4 (. 1 0 4 )
3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
Part Marking Information
TO-220AB E X AM PL I S N 1010 E X AM PLE : ET:HIT H IS A N AIRF IR F1 010 S W H A S S E MB W IT HITA S S E MB LY LY L CO CO 9B 9 B1M LO T OT DE D E 1M
A A
I NT E RN A TIO N IN TE R NA T ION A L AL R E C TIF R EC T IF IERIE R IR F IRF 10 10 1010 LOG LO GO O 9246 9246 9B 9B1M 1 M A SS E MB A S S EM B LY LY LOT C OD LO T CO DE E
P AR T NU M BE P A RT NU M BE R R
D A C C OD D A TE TEOD E E (Y W ) (Y YW YW W ) Y Y Y Y YE A R A R = = YE W = W EW EE K W W W = EK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 10/97

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